| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2003-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73c9079b8dd23f28e6e79a7f22ce4afe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22ac87e1e6a74d1ca3c612fa3645b8eb |
| publicationDate |
2003-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003222347-A1 |
| titleOfInvention |
High aspect ratio fill method and resulting structure |
| abstract |
A method is described for filling of high aspect ratio contact vias provided over silicon containing areas. A via is formed in an insulating layer over the silicon containing area and a silicide forming material is deposited in the via. A silicide region is formed over the silicon containing area, the silicide forming material is removed from the via leaving the silicide region. The via is then filled with a conductor using an electroless plating process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006188659-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2626891-A3 |
| priorityDate |
2002-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |