http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003194193-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-066 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-132 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-025 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-132 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5083511aeef16853618b44808fd70f4 |
| publicationDate | 2003-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2003194193-A1 |
| titleOfInvention | Semiconductor optical device |
| abstract | A multilayer semiconductor portion is provided on a semiconductor substrate on side faces of a semiconductor portion. A second conductive type III-V compound semiconductor layer is provided on the semiconductor portion and the multilayer semiconductor portion. The multilayer semiconductor portion has first to fourth semiconductor layers sequentially arranged on the semiconductor substrate. The first semiconductor layer is a first conductive type III-V compound semiconductor layer extending along the side face of the semiconductor portion and a principal surface of the semiconductor substrate. The second semiconductor layer is a second conductive type III-V group compound semiconductor layer extending along the first semiconductor layer. The third semiconductor layer is a first conductive type III-V compound semiconductor layer extending along the second semiconductor layer. The fourth semiconductor layer is a second conductive type III-V compound semiconductor layer provided on the third semiconductor layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3019312-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9500805-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005169571-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7016558-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7116854-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005036729-A1 |
| priorityDate | 2002-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.