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filingDate 2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2003186498-A1
titleOfInvention Method for fabricating metal interconnection with reliability using ionized physical vapor deposition
abstract A method for forming a multilayer metal thin film capable of improving electromigration reliability. The method includes steps of forming a Ti film having an <002> crystal orientation by using an ionized physical vapor deposition method, forming a TiN film on the Ti film in order to form a multilayer stack, wherein the TiN film has an <111> crystal orientation, and forming an aluminum film on the multilayer stack in an <111> crystal orientation. Accordingly, the aluminum metal interconnection increases the <002> orientation of the Ti film and improves the <111> orientation of the aluminum to control electromigration resistance, by using the IPVD method in forming the Ti film as an underlayer of the aluminum film.
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