| abstract |
A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate ( 202 ), forming a dielectric layer ( 204 ) over the semiconductor substrate ( 202 ), and etching a trench or a via ( 206 ) in the dielectric layer ( 204 ) to expose a portion of the surface of the semiconductor substrate ( 202 ). The method also includes the step of forming a conductive layer ( 212, 220 ) within in the trench or the via ( 206 ). The method further includes the steps of polishing a portion of the conductive layer ( 220 ) and annealing the conductive layer ( 212, 220 ) at a predetermined temperature. Moreover, the conductive layer ( 212, 220 ) also includes a dopant, and the dopant diffuses substantially to the surface of the top side of the conductive layer ( 212, 220 ) to form a dopant oxide layer ( 212 a , 220 a ) when the conductive layer ( 212, 220 ) is annealed at the predetermined temperature and the dopant is exposed to oxygen. |