http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003158058-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 2001-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5933493fee93755faeaa106432d0140 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f711758407ca8b1bee34c0299c234f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddbf3082cad09b376a06d741212676d8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03f3318b8ae7f85fb56b9d67f6c9cd58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad09c4eb5548d324ff8ae718f3dc6eef |
| publicationDate | 2003-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2003158058-A1 |
| titleOfInvention | Photoresist remover composition |
| abstract | The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2-20 weight % of water-soluble hydroxylamine, 5-15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30-55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride. In addition, during removing process of photoresist the photoresist remover composition can minimize the corrosion of lower metal film, in particular, the new metallic layers which is adopted to a production line of 64 MDRAM or more-VLSL |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011287995-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11016392-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8563495-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014038419-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113003535-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7569336-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007128539-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8999184-B2 |
| priorityDate | 2000-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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