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publicationDate 2003-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2003153195-A1
titleOfInvention Method and apparatus for providing modulated bias power to a plasma etch reactor
abstract A method and apparatus for modulating the bias power applied to a wafer support pedestal within a plasma etch reactor. The modulation has an on/off duty cycle of between 10 and 90 percent. Such modulation of the bias power substantially improves the verticality of the etched features located near the edge of a semiconductor wafer as the wafer is being etched in a plasma etch reactor.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011177669-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388544-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006168794-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004097077-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017208548-A
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Total number of triples: 28.