http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003153100-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-00 |
| filingDate | 2002-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ecac8a5e2609f4ae4f7dd6bc4d9c5a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0b52364e1a30c7e4b08e63c5ec307ea |
| publicationDate | 2003-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2003153100-A1 |
| titleOfInvention | Process for producing PZT films by chemical vapor deposition method |
| abstract | This invention provides a process for producing PZT films by specifying a Ti material having a broad allowable temperature range for giving a predetermined film composition, easily thermally deposited from Ti(OiPr) 2 (dpm) 2 even at a low substrate temperature of 450° C. or less in CVD where starting materials are fed in a solution vaporization system. Ti(OiPr) 2 (dibm) 2 is used as a Ti source, and a solution of a combination of Pb(dpm) 2 -Zr(OiPr)(dpm) 3 -Ti(OiPr) 2 (dibm) 2 in n-butyl acetate is vaporized and supplied at 200 ° C., and subjected to CVD at a substrate temperature of 420° C. at 1 Torr in an oxygen atmosphere, whereby excellent PZT films can be produced. n Ti(OiPr) 2 (dibm) 2 has a melting point of 105° C., a high solubility and a vapor pressure of 1 Torr/150° C. and does not react with Pb(dpm) 2 , and a solution thereof in n-butyl acetate has a pot life of 3 months. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004106583-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007287248-A1 |
| priorityDate | 2002-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.