| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3ad65c3edf9da24953f09acb2b71550 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2207-104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-377 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C8-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-4074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-408 |
| filingDate |
2003-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5090417f7e5b9938c4d1a80c1bb888db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_471f00ebad3a7a122ee4c5ef69f40017 |
| publicationDate |
2003-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003151071-A1 |
| titleOfInvention |
DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same |
| abstract |
A memory system that includes a dynamic random access memory (DRAM) cell including an access transistor and a capacitor structure fabricated in a semiconductor substrate. The capacitor structure is fabricated by forming a cavity in a shallow trench isolation region, thereby exposing a sidewall region of the substrate below the upper surface of the substrate. A dielectric layer is formed over the upper surface and the sidewall region of the substrate. A polysilicon layer is formed over the dielectric layer and patterned to form a capacitor electrode of the capacitor structure that extends over the upper surface and the sidewall region of the substrate. The capacitor electrode is partially recessed below the upper surface of the substrate. The polysilicon layer is also patterned to form the gate electrode of the access transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7253047-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7291880-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005285201-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005285163-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003020106-A1 |
| priorityDate |
1998-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |