| abstract |
A resist resin containing a monomer unit selected from the group consisting of the following Formulas (I) and (II): n n n wherein each of R 1 and R 2 represents a hydrogen atom, alkyl group or acid-deprotectable protecting group respectively, and n n n wherein a substituent R 3 represents an alkyl group, or a functional group comprising an acid-deprotectable protecting group, m representing the number of R 3 is 0 (non-substitution), 1, 2 or more, R 3 may be different from each other, provided that m is 2 or more, and n represents an integer of 0 to 4, has no rough spots on the surface after etching and so has good dry etching resistance, and therefore the resist resin is preferably used as a photo resist for DUV. |