| abstract |
Embodiments of the invention provide a method of plating a copper film on a substrate in an electrochemical plating apparatus. The method includes positioning a substrate in an electrolyte solution, applying a current between the substrate and an anode to generate a current density of between about 10 mA/cm2 and about 40 mA/cm2 on the substrate surface, rotating the, substrate at a rotational speed of between about 20 rpm and about 50 rpm, and plating a copper film having a sheet resistance of less than about 16.5×10 −2 Ohms/cm 2 . Embodiments of the invention further provide a copper film plated onto a semiconductor substrate, wherein the film has improved electromigration and stress characteristics |