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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
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filingDate 2002-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8e93b6a84d4b57fd685c5239a6d5274
publicationDate 2003-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2003128802-A1
titleOfInvention Resist material and exposure method
abstract An exposure method comprising subjecting a resist layer to selective exposure to an X-ray and forming a predetermined pattern in the resist layer, wherein the resist layer comprises a polymer material having an oxygen atom content n o of less than 0.05 in terms of the atomic ratio of an oxygen atom to all atoms contained in said polymer material, and having a density ρ which satisfies at least one formula selected from the group consisting of the following formulae (1) and (2): n ρ ≤ 3.66 × ( 12.011 × ( 1 - n o ) / 2 + 15.9994 × n o + 1.00794 × ( 1 - n o ) / 2 ) 32.4297 × ( 1 - n o ) / 2 + 126.595 × n o + 1.3607 × ( 1 - n o ) / 2 × 1.25 ( 1 ) ρ ≤ 3.66 × ( 12.011 × ( 1 - n o ) / 3 + 15.9994 × n o + 1.00794 × ( 1 - n o ) × 2 / 3 ) 32.4297 × ( 1 - n o ) / 3 + 126.595 × n o + 1.3607 × ( 1 - n o ) × 2 / 3 × 1.25 ( 2 ) n n By using a specific polymer material in a resist material, the absorption in the wavelength range of an extreme ultraviolet (EUV) light of the resist material can be reduced while securing favorable etching resistance, thus enabling a more improved ultra-fine processing than before.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7459401-B2
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priorityDate 2001-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 38.