| abstract |
The present invention provides a method for forming a transistor junction in a semiconductor wafer by implanting a dopant material ( 116 ) into the semiconductor wafer, implanting a halo material ( 110 ) into the semiconductor wafer ( 102 ), selecting a fluorine dose and energy to tailor one or more characteristics of the transistor, implanting fluorine into the semiconductor wafer at the selected dose and energy, activating the dopant material using a thermal process and annealing the semiconductor wafer to remove residual fluorine. The one or more characteristics of the transistor may include halo segregation, halo diffusion, the sharpness of the halo profile, dopant activation, dopant profile sharpness, drive current, bottom wall capacitance or near edge capacitance. |