http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003107865-A1

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filingDate 2002-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_592f2b36d0695b1340fb5451bddeaedd
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publicationDate 2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2003107865-A1
titleOfInvention Wafer handling apparatus and method of manufacturing the same
abstract Disclosed is a wafer handling device having a coating layer (3) surrounding a wafer handling device (1,2) that consists essentially of non-crystalline carbon (DLC) having electric resistivity ranging from 10 sup 8 to 10 sup 13/ &-cm. The coating layer preferably contains 15-26 atom % of hydrogen. The coating layer preferably has an intensity ratio of 0.7-1.2, the intensity ratio being defined as a ratio of an intensity at 1360 cm −1 to another intensity at 1500 cm −1 when said coating layer is subjected to Raman spectroscopic analysis. The coating layer is manufactured by the P-CVD process wherein hydrocarbon (CxHy) is introduced into a vacuum container and ionized therein by ionizing process and ionized hydrocarbon is deposited on the surface of said wafer handling device by applying thereto a predetermined pulse voltage within an after-glow time of smaller than 250 microseconds.
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