abstract |
An ester compound of the following formula (1) is provided. n n n R 1 is H, methyl or CH 2 CO 2 R 3 , R 2 is H, methyl or CO 2 R 3 , R 3 is C 1 -C 15 alkyl, R 4 is branched or cyclic, tertiary C 5 -C 20 alkyl group, Z is a divalent C 1 -C 10 hydrocarbon group, and k is 0 or 1. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV. |