| abstract |
The present invention provides a copper plating solution for embedding fine wiring, wherein it contains copper sulfate at 100 to 300 g/L as copper sulfate pentahydrate, sulfuric acid at 5 to 300 g/L, chlorine at 20 to 200 mg/L, a macromolecular surfactant at 0.05 to 20 g/L for controlling the electrodeposition reaction, sulfur-based saturated organic compound at 1 to 100 mg/L for accelerating the electrodeposition reaction, leveling agent composed of a macromolecular amine compound at 0.01 to 10 mg/L and reductant at 0.025 to 25 g/L for stabilizing the copper plating solution. The copper plating solution of the present invention for embedding fine wiring can plate the wafer surface provided with fine wiring patterns with sub-micron order gaps in-between and coated with copper serving as the metallic seed film, to fill the gaps neither leaving any defect therein nor dissolving the metallic seed film. |