http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003073297-A1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2002-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8870a3fc701be12e5d8a6bbd7363ea9
publicationDate 2003-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2003073297-A1
titleOfInvention Method for fabricating a semiconductor structure using a protective layer, and semiconductor structure
abstract A method produces a semiconductor structure on a substrate. Then, a protective layer is applied to the semiconductor structure. To fabricate a further semiconductor structure that is to be formed on the substrate, intermediate processes, which lead to the formation of cracks in the protective layer, are carried out. The protective layer is repaired with the aid of a repair layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017183390-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018088487-A
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type http://data.epo.org/linked-data/def/patent/Publication

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