| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76281 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76264 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2002-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7b1ce68beabdeb435296263a26235cb |
| publicationDate |
2003-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003068870-A1 |
| titleOfInvention |
Method of manufacturing semiconductor element |
| abstract |
According to the present invention, a semiconductor device to use a SOI substrate performing insulation by a LOCOS method in which an oxide resistivety film provided on a silicon layer is used, includes steps of: implanting impurity in a LOCOS edge which is a silicon layer under bird's beak of the field oxide film with the oxide resistant film as a mask after a field oxide film is formed and forming a high density impurity area having impurity density higher than impurity density of an impurity diffusion layer formed on the silicon layer, and removing a pad oxide film after a heat treatment is performed for the field oxide film after the high density impurity area is formed. Therefore, a method of manufacturing the semiconductor device at a lower cost to suppress occurrence of hump and to prevent a MOSFET characteristic from deteriorating can be provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7709350-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007210382-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7851858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I412130-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004087103-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008128807-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7829400-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8263443-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7192840-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006166412-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011027949-A1 |
| priorityDate |
2001-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |