| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-909 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2002-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dee8e89f6ca0c523da54533ab4dcbbf7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_272a3a19bc14cd6e36387eaab4f95439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cc404f978506f8351fb532e12b15537 |
| publicationDate |
2003-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003060039-A1 |
| titleOfInvention |
Method of passivating an oxide surface subjected to a conductive material anneal |
| abstract |
A method of preventing formation of titanium oxide within a semiconductor device structure during a high temperature treatment of the device structure includes forming a passivation layer to preclude formation of titanium oxide at a titanium/oxide interface of a semiconductor device structure. The method includes providing a substrate assembly including at least an oxide region and forming a layer of titanium over a surface of the oxide region. The oxide region surface is treated with a plasma comprising nitrogen prior to forming the titanium layer so as to form a passivation layer upon which the titanium layer is formed. A thermal treatment is performed on the substrate assembly with the passivation layer substantially inhibiting diffusion of oxygen from the oxide layer during the thermal treatment of the substrate assembly. Generally, the passivation layer comprises Si x O y N z . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8354719-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021027903-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011198696-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6774022-B2 |
| priorityDate |
1998-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |