| abstract |
The present invention provides a method for fabricating a low dielectric constant (low-k) material film. A spin-on low-k material film is formed in a provided substrate, and a baking process is performed to the spin-on low-k material film. An energy beam is then applied evenly on the spin-on low-k material film to cure the film. The present invention can efficiently reduce leakage currents of the low-k material film by applying high-energy beams onto the low-k material to attain complete bindings. |