Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-905 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
filingDate |
2001-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3876dc9aca92332e6da9bffd652334b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f88007caa07e732317cc8e977dcf513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be24c42915a5be22182119b400c12b29 |
publicationDate |
2003-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2003036264-A1 |
titleOfInvention |
Method of etching platinum using a silicon carbide mask |
abstract |
Disclosed herein is a method of etching platinum using a silicon carbide mask. The method comprises providing an etch stack including a patterned silicon carbide layer overlying a layer of platinum, then pattern etching the platinum layer using a plasma generated from a source gas comprising Cl 2 , BCl 3 , and a nonreactive, diluent gas. The silicon carbide mask can be deposited and patterned using standard industry techniques, and can be easily removed without damaging either the platinum or an underlying doped substrate material. The method provides a smooth platinum etch profile and an etch profile angle of about 75° to about 90°. Also disclosed herein are methods of forming semiconductor structures useful in the preparation of DRAM and FeRAM cells. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007099403-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11120969-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10643819-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9142401-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I392013-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8785997-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7598184-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9384960-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10858727-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007099428-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017155043-A1 |
priorityDate |
2001-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |