| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521 |
| classificationCPCInventive |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-12004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-025 |
| classificationIPCAdditional |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-40 |
| filingDate |
2001-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de5f8a20e6eeebe6101b0831f506b522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04314f19e600874f7b33dd9293d53699
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9ffe1b7b889dca4af7d8f08553e5853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fba6ff93bd2f5f391dac81d712440cf9 |
| publicationDate |
2003-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003034538-A1 |
| titleOfInvention |
Tunable laser array in composite integrated circuitry |
| abstract |
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. A composite integrated circuit having a tunable laser is provided. The laser may be mode-locked. Injection-locking may be used to pass optical properties to a slave laser. An array of lasers may provide different optical outputs into one or more waveguides. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10509163-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006239325-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9142585-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10732349-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10285757-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010284019-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11489315-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014321484-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3414609-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8805136-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11585977-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2787388-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007228484-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11539440-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2787388-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11487181-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007183719-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11131601-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004071387-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015010034-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007258673-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021296849-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9031409-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108885320-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022075130-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020191086-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7492982-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017139345-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7016569-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11029476-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101385207-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7504311-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8000374-B2 |
| priorityDate |
2001-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |