http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003030070-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0821 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 2002-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a5c87261fc0d726074b2edd87a964b7 |
| publicationDate | 2003-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2003030070-A1 |
| titleOfInvention | Bipolar transistor |
| abstract | A bipolar transistor comprises an A layer of a first conductive type stacked on a semiconductor substrate of a first conductive type, a B layer of the first conductive type stacked on the A layer, the dopant concentrations of the B layer and the A layer differing, a C layer of a second conductive type stacked on the B layer, the conductive type of the C layer differing from that of the A layer, B layer and the substrate and, a D layer of the first conductive type stacked on the C layer, a collector electrode using the A layer, the B layer, and the substrate as a collector, a base electrode using the C layer as a base, and an emitter electrode using the D layer as an emitter. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010029089-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8394726-B2 |
| priorityDate | 2001-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.