| abstract |
An ion source for an ion implanter is provided, comprising: (i) a sublimator ( 52 ) having a cavity ( 66 ) for receiving a source material ( 68 ) to be sublimated and for sublimating the source material; (ii) a gas injector ( 104 ) for injecting gas into the cavity ( 66 ); (iii) an ionization chamber ( 58 ) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; and (iv) a feed tube ( 62 ) for connecting the sublimator ( 52 ) to the ionization chamber ( 58 ). The gas injected into the cavity may be either helium or hydrogen, and is designed to improve the heat transferability between walls ( 64 ) of the sublimator ( 52 ) and the source material ( 68 ). |