| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 |
| filingDate |
2001-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00be85b56a15fa79d3ca8ad9b48d6574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac8db1f32e82c9aa09e729832dbd073c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a850a1eb1dfb49c206f1d6f2e06a1abd |
| publicationDate |
2003-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003022525-A1 |
| titleOfInvention |
Semiconductor structure and device including a monocrystalline layer formed overlying a compliant substrate and a method of forming the same |
| abstract |
High quality epitaxial layers of monocrystalline materials ( 26 ) can be grown overlying monocrystalline substrates such as large silicon wafers ( 22 ) by forming a compliant substrate for growing the monocrystalline layers ( 26 ). An accommodating buffer layer comprises a layer of monocrystalline oxide ( 24 ) spaced apart from a silicon wafer ( 22 ) by an amorphous interface layer of silicon oxide ( 28 ). The amorphous interface layer ( 28 ) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The silicon substrate ( 22 ) is intentionally “mis-cut” off a major axis to provide a surface that facilitates two dimensional growth of the low-defect monocrystalline material layer ( 26 ). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012161287-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8368179-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010148195-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8110482-B2 |
| priorityDate |
2001-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |