http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003020063-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate | 2001-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f786f5e16768ff4923cd6e1d2f62ab1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8276c84e0b6ddb22ee7b651bcaffede7 |
| publicationDate | 2003-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2003020063-A1 |
| titleOfInvention | Composite semiconductor structure and device for digital processing systems |
| abstract | Composite semiconductor structures and devices are presented in which digital processing systems are formed. The structures and devices include a first semiconductor material (which can be a Group IV semiconductor such as silicon), an accommodating layer (which can be an oxide or nitride), and a second semiconductor material (which can be a compound semiconductor such as gallium arsenide). The first and second semiconductor materials and accommodating layer can be fabricated as a single integrated circuit chip. Computationally intensive functions, such as arithmetic logic functions, and other digital processing functions requiring high speed operation, such as information transfer, can be formed in the second semiconductor material while other functions, such as control and memory, can be formed in the first semiconductor material. Such formation of digital processing systems improves system performance. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010118529-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010263707-A1 |
| priorityDate | 2001-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 70.