| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2001-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5791a700c55bfe52df5f23842668fd91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36bce10ccf8b5549fe5f9246b109f55c |
| publicationDate |
2003-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2003019423-A1 |
| titleOfInvention |
Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant gallium nitride substrate |
| abstract |
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers or compound semiconductor wafers by forming a compliant substrate for growing the monocrystalline layers. In particular, a compliant large area GaN substrate can be fabricated for forming semiconductor structures and devices. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant large area GaN substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials and the resulting large area GaN substrate may be formed as a defect free stand alone substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9074297-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011153441-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011153441-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008213543-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2045835-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2045835-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7771849-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9856579-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018172915-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012021163-A1 |
| priorityDate |
2001-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |