http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003013252-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2001-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3876dc9aca92332e6da9bffd652334b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c593e6c47f3cba30c90e52dc7d5342b |
| publicationDate | 2003-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2003013252-A1 |
| titleOfInvention | Method of forming a cup capacitor |
| abstract | A simple method of forming a cup capacitor is disclosed. The method typically involves only “dry” deposition and etching steps, allowing applicants' method to be performed in a single processing apparatus, if so desired. The method includes the following steps: a) providing a semiconductor structure including a dielectric layer overlying a semiconductor substrate, wherein a cup is present in the dielectric layer, the cup having an opening at an upper surface of the dielectric layer; b) depositing a conformal layer of a conductive material over the dielectric layer, including the sidewalls and bottom of the cup; c) depositing a layer of a sacrificial material over the conductive material, in an amount sufficient to fill the cup; d) removing sacrificial material present on an upper surface (field surface) of the conductive layer outside of and adjacent to the cup by plasma etching, using a plasma source gas which selectively etches the sacrificial material relative to the conductive material; e) removing conductive material present on an upper surface (field surface) of the dielectric layer outside of and adjacent to the cup by plasma etching, using a plasma source gas which selectively etches the conductive material relative to the sacrificial material remaining inside of the cup; and f) removing sacrificial layer material remaining inside of the cup by etching, using an etchant which selectively etches the sacrificial material inside of the cup relative to the conductive material inside of the cup. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8580648-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008169269-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745865-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224794-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2329524-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010187589-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011204427-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2329524-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009130779-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9136463-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007018224-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8487361-B2 |
| priorityDate | 2001-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.