| abstract |
Photoresist polymers having nitro groups (—NO 2 ), and photoresist compositions containing the same. A photoresist pattern having excellent endurance, etching resistance, reproducibility and resolution can be formed by the use of the photoresist copolymer comprising polymerization repeating units represented by Chemical Formula 1a or 1b: n n n wherein, R 1 , a, b, c, d, e, f, g and h is defined in the specification. n Having nitro groups in the polymer, the photoresist polymer results in a low absorbance in the range of 157 nm wavelength, so that it is extremely useful for a photolithography process using, in particular, VUV light source. |