Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
filingDate |
2002-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02063be7bb15762b48a0f1c273bf29db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_136bf5dc8529cc823195973f226036ab |
publicationDate |
2003-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2003012877-A1 |
titleOfInvention |
Deposition of a siloxane containing polymer |
abstract |
An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by further reacting a substance which associates readily with the compound containing the peroxide bonding. |
priorityDate |
1998-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |