| abstract |
A process for producing crystalline III-V compound films, preferably thin films of gallium nitride and other III-V nitrides, on various single crystal substrates. The process enables the preparation of III-V compound films by the simple, direct deposition of an amorphous layer of a III-V compound precursor on a single crystal substrate (as a template). A chemical reaction followed by a single heat treatment leads to the crystallization and formation of films by pyrolysis. According to specific examples of the invention, the chemical precursors gallium dimethyl amide (Ga 2 [N(CH 3 ) 2 ] 6 ), gallium nitrate (Ga(NO 3 ) 3 , and gallium isopropoxide [Ga(OC 3 H 7 ) 3 are used to produce gallium nitride thin films. |