| abstract |
Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. n n n wherein, X 1 , X 2 , Y 1 , Y 2 , Y 3 , Y 4 , Y 5 , Y 6 , Y 7 , Y 8 , l and m are as defined in the specification of the invention. |