| abstract |
A flip chip type semiconductor device is provided with a semiconductor chip with a plurality of pad electrodes on one surface. A solder electrode is connected to each pad electrode and a metallic post is connected to each solder electrode. The surface of the semiconductor chip on a side on which the pad electrodes are provided is coated with an insulating resin layer and whole the pad electrode and solder electrode and part of the metallic post are buried in the insulating resin layer. The remaining portion of the metallic post is projected from the insulating resin layer to form a protrusion. Then, an outer solder electrode is formed so as to cover this protrusion. The outer solder electrodes are arranged in a matrix on the insulating resin layer. The height of the protrusion is made 7 to 50% of the distance between an end of the outer solder electrode and the surface of the insulating resin layer. |