| abstract |
A method for fabricating an MOM capacitor ( 10 ) includes forming a first conductive layer ( 18 ) on an insulating support ( 12, 14 ), depositing a dielectric film ( 20 ) on the conductive layer, and patterning the dielectric film to define the capacitor feature. The dielectric film may comprise a stack of oxide and nitride layers ( 22, 24, 26 ). The dielectric is etched anisotropically with a fluorocarbon plasma to remove unwanted dielectric material ( 38 ) around the capacitor feature. Sidewalls ( 40 ), built up during the anisotropic etch as a result of sputtering the first conductive layer during the necessary overetch, are removed in a low power, higher pressure etch with an SF 6 plasma, which is substantially isotropic in character. The process allows a sidewall-free capacitor to be formed in a single reactor without the need for solvent cleaning to remove the sidewall material. |