| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2002-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7170512123e9154b527e99e31ee6e4ba |
| publicationDate |
2002-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2002187624-A1 |
| titleOfInvention |
Method for forming metal line of semiconductor device |
| abstract |
A method for forming a metal line of a semiconductor device is disclosed, which improves a crystal structure of a Cu line 111 to improve electro-migration characteristics and reliability. The method includes forming a trench on a substrate by patterning an insulating interlayer. A barrier metal film is formed on the trench and the insulating interlayer. A seed Cu film is formed on the barrier metal film. A PVD metal film is formed on the seed Cu film by a physical vapor deposition (PVD) process. An electroplated metal film is deposited on the PVD metal film to fill the trench. Lastly, a metal line is formed in the trench by removing the films to expose the insulating interlayer on either side of the metal line in the trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010044806-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007117909-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008284023-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10164045-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8679962-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007235876-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004950-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111162011-A |
| priorityDate |
2001-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |