abstract |
A method of manufacturing a semiconductor device comprises providing a substrate having a first insulating layer formed thereon. Then, a dummy layer is selectively formed on the first insulating layer. Therefore, a concave portion is formed to expose the first insulating layer. Next, a second insulating layer is selectively formed within the concave portion of the substrate. When the second insulating layer is formed, hexamethyldisilazane is used as a source gas and oxygen is used as an adjunction gas while the substrate is irradiated by vacuum ultraviolet light. By the formation of the second insulating layer, the dummy layer and the second insulating layer form an approximate flat surface. |