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filingDate 2001-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2002180048-A1
titleOfInvention Stacked device and method of fabricating same
abstract A stacked semiconductor device structure includes an underlying MOS device formed on a silicon substrate and an overlying GaAs device. An accommodating buffer layer is formed between the MOS device and the GaAs device. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon substrate by an amorphous interface layer of silicon oxide, and is lattice matched to both the underlying silicon substrate and the overlying GaAs layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Metal interconnects are provided for connecting the MOS device and the GaAs device.
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