| abstract |
An electronically active film comprising a compound of the formula: n n n In a preferred embodiment of the invention, CG1 and CG2 are independently electron-transport or hole-transport groups; x is an integer from about 3 to about 3000; ODAH is a dianhydride residue; ODAM is a diamine residue; and m, n, o, and p cumulatively add to 1.0, with the sum of m and n ranging from about 0.05 to about 1.0, the sum of o and p ranging from about 0 to about 0.95, the sum of m and o being about 0.5 and the sum of n and p being about 0.5. A process for manufacturing the film and a device containing the film structure also are disclosed. |