Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
filingDate |
2001-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2fcf1c9270ec36744c13fcf1d46d409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7bc801fd112f0b7d900e1741e803319 |
publicationDate |
2002-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2002155730-A1 |
titleOfInvention |
Deposition of silicon oxide films |
abstract |
A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided. The silicon oxide layer is formed by reacting a first gas mixture and a second gas mixture. The first gas mixture comprises tetra-ethyl-ortho-silicate (TEOS), helium (He) and nitrogen (N 2 ). The second gas mixture comprises ozone (O 3 ) and optionally, oxygen (O 2 ). |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7479688-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004238914-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10858727-B2 |
priorityDate |
2001-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |