http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002119403-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2001-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d91f091f647b701263cb6cf6bb54589 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce50ed3fdc57398b8cc44a566fcadbf5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c70ed2cf7e40cb70843f998145bdef0e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8d00c289ec465f4bf5c180f941d0e72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1963849cd892ce06de359f47564faac4 |
| publicationDate | 2002-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2002119403-A1 |
| titleOfInvention | Method of forming a pattern using a photoresist without exposing the photoresist and silicidation method incorporating the same |
| abstract | A photoresist pattern is formed, without being exposed, by using photoresist having a residual layer proportion characteristic by which the photoresist dissolves at a suitable rate in a developing solution. First, a target layer to be patterned and a photoresist layer are sequentially formed on a substrate having a pattern that defines a step on the substrate. Some of the photoresist layer is treated with the developing solution, to thereby form a photoresist pattern whose upper surface is situated beneath the step and hence, exposes part of the target layer. Next, the exposed part of the target layer, and the photoresist pattern are removed. A silicidation process may be carried out thereafter on the area(s) from which the target layer has been removed. The method is relatively simple because it does not involve an exposure process. Furthermore, the method can be used to manufacture devices having very fine linewidths, i.e., a small design rule, because it is not subject to the misalignment errors which can occur during a conventional exposure process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9443741-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112366178-A |
| priorityDate | 2000-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.