| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2001-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc0fba691e2041e631f040aa278ddc32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba47eb83068d8dc37a01e5bebfe34b98 |
| publicationDate |
2002-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2002111011-A1 |
| titleOfInvention |
Method for forming a contact plug without a dimple surface |
| abstract |
A method for forming a contact plug without a dimple surface is provided. The present method is characterized in that forming a trench-shaped opening penetrating a dielectric layer formed on a semiconductor substructure having a lower electrical conductor, and forming a liner layer with a tapered width decreasing from the top of the trench-shaped opening to the bottom thereof, and then forming a conductive plug to fill the trench-shaped opening. Since the width of the liner layer is decreased gradually from the top of the trench-shaped opening, a seam is formed in the trench-shaped opening below the surface of the dielectric layer when depositing a conductive layer over the dielectric layer and the trench-shaped opening for the conductive plug. Thereby, a conductive plug without a dimple surface is formed in the trench-shaped opening by etching back the conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8481416-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9449925-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010159689-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005248035-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7998851-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013175668-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014053484-A1 |
| priorityDate |
2001-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |