| abstract |
A method for etching features in an integrated circuit wafer, the wafer incorporating at least one dielectric layer is provided. Generally, the wafer is disposed within a reaction chamber. An etchant gas comprising a hydrocarbon additive and an active etchant is flowed into the reaction chamber. A plasma is formed from the etchant gas within the reaction chamber. The feature is etched in at least a portion of the dielectric layer. n Several sources of appropriate hydrocarbon are identified as suitable to practice the present invention. These include, but are specifically not limited to: ethylene, C 2 H 4 ; ethane, C 2 H 6 ; and methane, CH 4 . |