| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-312 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2001-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fa919da5c4d689a2d81777364df8062 |
| publicationDate |
2002-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2002093043-A1 |
| titleOfInvention |
Reduced aspect ratio digit line contact process flow used during the formation of a semiconductor device |
| abstract |
A method used during the formation of a semiconductor device comprises forming a first portion of a digit line contact plug before forming storage capacitors. Subsequent to forming storage capacitors, a second portion of the digit line plug is formed to contact the first portion, then the digit line runner is formed to contact the second plug portion. A structure resulting from the process is also described. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008128855-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004108573-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I725783-B |
| priorityDate |
2001-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |