abstract |
Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2.5. The substituted organosilane compounds have the general formula: n R 1 SiR 2 R 3 R 4 or R 5 R 6 R 7 SiR′SiR 8 R 9 R 10 or (—R 11 —)SiR 12 R 13 n where, R 1 is selected from the group consisting of a cyclic or acyclic hydrocarbon having from one carbon to eight carbon atoms; R 2 , R 3 and R 4 are the same or different, and are selected from the groups consisting of H, CH 3 , vinyl or other hydrocarbon containing two or more carbon atoms; R 5 , R 6 , R 7 , R 8 , R 9 , R 10 are a cyclic or acyclic hydrocarbon group including H, and can be the same or different, having from one carbon to eight carbon atoms; R′ is a linking group between the two silicon atoms, and can be a cyclic or acyclic hydrocarbon group, having from one carbon to six carbon atoms; R 11 is a chelate hydrocarbon group containing two or more carbon atoms, R 12 and R 13 are a cyclic or acyclic hydrocarbon group including H, and can be the same or different. |