| abstract |
To provide a method of manufacturing silicon carbide by forming silicon carbide on a substrate surface from an atmosphere containing a silicon carbide feedstock gas comprising at least a silicon source gas and a carbon source gas under condition 1 or 2 below: n Condition 1: the partial pressure ps of silicon source gas is constant (with ps>0), the partial pressure of carbon source gas consists of a state pc 1 and a state pc 2 that are repeated in alternating fashion, wherein pc 1 and pc 2 denote partial pressures of carbon source gas, pc 1> pc 2 , and pc 1 /ps falls within a range of 1-10 times the attachment coefficient ratio (Ss/Sc), pc 2 /ps falls within a range of less than one time Ss/Sc; n Condition 2: the partial pressure pc of carbon source gas is constant (with pc>0), the partial pressure of silicon source gas consists of a state ps 1 and a state ps 2 that are repeated in alternating fashion, wherein ps 1 and ps 2 denote partial pressures of silicon source gas, ps 1< ps 2 , and pc/ps 1 falls within a range of 1-10 times Ss/Sc, pc/ps 2 falls within a range of less than one time Ss/Sc. |