http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002055265-A1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0445
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
filingDate 2001-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_216e919aa1e412381076e19689d3cad3
publicationDate 2002-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2002055265-A1
titleOfInvention Method of forming vias in silicon carbide and resulting devices and circuits
abstract A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device on a first surface of a silicon carbide substrate and with at least one metal contact for the device on the first surface of the substrate. The opposite, second surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished second surface of the silicon carbide substrate to define a predetermined location for a via that is opposite the device metal contact on the first surface; etching the desired via through the desired masked location until the etch reaches the metal contact on the first surface; and metallizing the via to provide an electrical contact from the second surface of the substrate to the metal contact and to the device on the first surface of the substrate.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013055423-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007254475-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8669183-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8598720-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9159612-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1564806-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010193914-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02078096-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010194892-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003216034-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014103539-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007281474-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7759247-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021119057-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9024326-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6846747-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8067313-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007020919-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490214-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021358763-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7256497-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005269704-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010103325-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8358346-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7361586-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010102460-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7214325-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11658038-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8726332-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013055423-A2
priorityDate 2000-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24640
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23939
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25135
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447604988
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491805
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23963
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546674
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23985
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556508
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458431511
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14792
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID29011
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559477
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415712843
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6547
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6356
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID17358
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID482532689
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57350325
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414859283
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527022
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419528718
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82238
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523934

Total number of triples: 76.