patent/US-2002013114-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002013114-A1

Outgoing Links

Predicate	Object
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13454
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672
classificationIPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
filingDate	2001-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f972cbb1032d0a8fc82304958a3beae0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7aaa574b76d65563177d983e38d9e27a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0e3687553467f6b262e5c974ef315c4
publicationDate	2002-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-2002013114-A1
titleOfInvention	Semiconductor device and method of manufacturing the same
abstract	There is provided a method in which a TFT with superior electrical characteristics is manufactured and a high performance semiconductor device is realized by assembling a circuit with the TFT. The method of manufacturing the semiconductor device includes: a step of forming a crystal-containing semiconductor film by carrying out a thermal annealing to a semiconductor film; a step of carrying out an oxidizing treatment to the crystal-containing semiconductor film; a step of carrying out a laser annealing treatment to the crystal-containing semiconductor film after the oxidizing treatment has been carried out; and a step of carrying out a furnace annealing treatment to the crystal-containing semiconductor film after the laser annealing. The laser annealing treatment is carried out with an energy density of 250 to 5000 mJ/cm 2 .
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7282398-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6911698-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7847294-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7803699-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006051907-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7141823-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10128258-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006009014-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7160784-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8822349-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2009680-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009256469-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8115263-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002119633-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2009680-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007048983-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009242895-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007004130-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9460974-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010163875-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004201023-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7192813-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008099793-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7294535-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006276012-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004876-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7196400-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008296565-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8101952-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6861339-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10319733-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7186600-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006261339-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9121829-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005158930-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8860037-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008277665-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004072393-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8790967-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6828179-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007026655-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006024981-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8283668-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10396106-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7667235-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017330757-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388823-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8441018-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9257606-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE43450-E http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7407873-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513669-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007040175-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8318523-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7618904-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7084016-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007120189-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004077155-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6693044-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006057786-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7153729-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009050893-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009050894-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010213467-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-RE38266-E http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006278876-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10637211-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8436360-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001036692-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003032221-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7329594-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004038465-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666600-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10693033-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010006855-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9406574-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8253141-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7989806-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005035413-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005121671-A1
priorityDate	1998-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

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Subject

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003094625-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5712191-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001036692-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6559036-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5563426-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6335541-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5608232-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002119633-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID129389030
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID69667

Total number of triples: 116.