| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P20-55 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D295-185 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D295-185 |
| filingDate |
2001-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be6f4a3be9ad73407ea0b4e3de46dc35 |
| publicationDate |
2002-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2002012879-A1 |
| titleOfInvention |
Novel photoresist monomers, polymers thereof, and photoresist compositions containing the same |
| abstract |
Dipropargyl acetamide derivatives of following Formula 1 which are photoresist monomers, polymers thereof, and photoresist compositions containing the same. The photoresist polymer has high etching resistance, adhesiveness and post-exposure delay stability. As a result, the photoresist composition is suitable to form a fine pattern in a deep ultraviolet region. n n n wherein, n is an integer from 0 to 5. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6514666-B1 |
| priorityDate |
2000-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |