http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001055818-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N99-03 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 |
| filingDate | 2001-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc6b4fd9500d7708c080d601f34e2bd0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02ba39d68c9cd15e8521b9f584aa96a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3792241888fb2ce99c9a7eb93a7bc61f |
| publicationDate | 2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2001055818-A1 |
| titleOfInvention | Process for fabricating a field-effect transistor with a buried Mott material oxide channel |
| abstract | A structure and method of forming an integrated circuit (e.g., field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts. |
| priorityDate | 1999-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.