http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001054763-A1

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filingDate 1998-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d5156ab86774434ff5086d24b6edbc6
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publicationDate 2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2001054763-A1
titleOfInvention Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same
abstract For forming a contact electrode to an n-type layer of a gallium nitride-based compound semiconductor, the n-type contact layer of the gallium nitride-based compound semiconductor is exposed to an oxygen plasma to form an oxygen-doped surface layer in a surface of the n-type contact layer, and then, an electrode metal is formed on the oxygen-doped surface layer. With this arrangement, an n-type contact electrode having a low specific contact resistance is obtained with good reproducibility, with performing no annealing after formation of the electrode metal.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741578-B2
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priorityDate 1997-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 29.