Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
filingDate |
1998-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d5156ab86774434ff5086d24b6edbc6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59c01463e5a649bcc35a6d6cdc273646 |
publicationDate |
2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2001054763-A1 |
titleOfInvention |
Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same |
abstract |
For forming a contact electrode to an n-type layer of a gallium nitride-based compound semiconductor, the n-type contact layer of the gallium nitride-based compound semiconductor is exposed to an oxygen plasma to form an oxygen-doped surface layer in a surface of the n-type contact layer, and then, an electrode metal is formed on the oxygen-doped surface layer. With this arrangement, an n-type contact electrode having a low specific contact resistance is obtained with good reproducibility, with performing no annealing after formation of the electrode metal. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741578-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101605363-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8524619-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012028475-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9209254-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8759128-B2 |
priorityDate |
1997-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |