http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2001054558-A1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76874
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2001-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1319f95cdc56e7278055674377b47e39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf254747c4c40149ffdfb3c40da43791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b778b7dcad93f0de238093e40c37114
publicationDate 2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2001054558-A1
titleOfInvention Method for producing a semiconductor device
abstract A producing method of the present invention includes (i) forming a wiring line above a semiconductor substrate, (ii) forming an insulating layer above the semiconductor substrate and the wiring line, (iii) forming an opening penetrating the insulating layer in the insulating layer with respect to a portion above the wiring line, (iv) forming a barrier layer whose surface is formed of a material A, so as to cover a surface of the insulating layer and an inner surface of the opening, (v) forming a metal layer made of a first metal on the barrier layer, and (vi) depositing a second metal inside the opening by a plating, thus forming a via plug containing the second metal. A rest potential P A of the material A with respect to the second metal is larger than a rest potential P M of the first metal with respect to the second metal.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009220683-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7883614-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905459-B1
priorityDate 2000-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6399479-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6090702-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415776239
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23956
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID93091
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82832
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID416641266
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559362
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82895
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520403

Total number of triples: 34.